Three-dimensional silicon on oxide device isolation

ABSTRACT

A silicon-on-insulator wafer ( 10 ). The SOI wafer ( 10 ) comprises a top silicon layer ( 6 ), a silicon substrate ( 4 ), and an oxide insulator layer ( 2 ) disposed across the wafer ( 10 ) and between the silicon substrate ( 4 ) and the top silicon layer ( 6 ). The oxide insulator layer ( 2 ) has at least one of a contoured top surface ( 8   a   , 8   b   , 8   c   , 8   d   , 8   e ) and a contoured bottom surface ( 12   e ). Also provided are processes for manufacturing such a SOI wafer ( 10 ).

TECHNICAL FIELD

The present invention relates generally to silicon-on-insulator wafersand, more particularly, to a contoured insulator layer of such wafers.

BACKGROUND OF THE INVENTION

The process of manufacturing electric circuits involves connectingisolated devices through specific electrical paths. When manufacturingsilicon integrated circuits (ICs) or chips, therefore, the devices builtinto the silicon must be isolated from one another. The devices cansubsequently be interconnected to create the specific circuitconfigurations desired. Thus, isolation technology is one of thecritical aspects of manufacturing ICs.

A variety of techniques have been developed to isolate devices in ICs.One reason is that different IC types have different isolationrequirements. Such types include, for example, NMOS, CMOS, and bipolar.An NMOS or negative-channel metal-oxide semiconductor is a type ofsemiconductor that is negatively charged so that transistors are turnedon or off by the movement of electrons. In contrast, a PMOS(positive-channel MOS) works by moving electron vacancies. An NMOS isfaster than a PMOS, but also more expensive to produce.

A CMOS or complementary metal oxide semiconductor uses both NMOS(negative polarity) and PMOS (positive polarity) circuits. Because onlyone of the circuit types is on at any given time, CMOS chips requireless power than chips using just one type of transistor. This makes CMOSchips particularly attractive for use in battery-powered devices, suchas portable computers. Personal computers also contain a small amount ofbattery-powered CMOS memory to hold the date, time, and system setupparameters.

The bipolar transistor is an electronic device with two pn junctions inclose proximity. There are three device regions: an emitter, a base (themiddle region), and a collector. The two pn junctions (i.e., theemitter-base and collector-base junctions) are in a single bar ofsemiconductor material, separated by a distance. Modulation of thecurrent flow in one pn junction by changing the bias of the nearbyjunction is called bipolar-transistor action. External leads can beattached to each of the three regions, and external voltages andcurrents can be applied to the device from these leads.

These and other different IC types require different isolationtechnologies. In addition, the various isolation technologies havedifferent attributes with respect to minimum isolation spacing, surfaceplanarity, process complexity, and density of defects generated duringmanufacture of the isolation structure. Tradeoffs must be made amongthese characteristics when selecting an appropriate isolation technologyfor a particular circuit application.

Historically, because bipolar ICs were the first to be developed, atechnology for isolating the collector regions of the bipolar deviceswas also the first to be invented (called junction isolation, a termincluding structures that are isolated by an oxide along the side wallsand by a junction at the bottom). PMOS and NMOS ICs did not needjunction isolation; nevertheless, it was still necessary to provide anisolation structure that would prevent the establishment of parasiticchannels between adjacent devices. The most important techniquedeveloped was called LOCOS isolation (for LOCal Oxidation of Silicon),which involved the formation of a semi-recessed oxide in the nonactiveareas of the substrate.

As device geometries reached submicron size, conventional LOCOSisolation technologies reached the limits of their effectiveness.Therefore, alternative isolation processes for CMOS and bipolartechnologies were needed. Modified LOCOS processes, which overcome someof the drawbacks of conventional LOCOS for small-geometry devices;trench isolation; and selective-epitaxial isolation—all were among thenewer approaches adopted.

Devices that must function under high voltages and in harsh radiationenvironments require even more stringent isolation technologies.Junction isolation is not suitable for high-voltage applications becauseat supply voltages of +30 volts junction breakdown occurs underreasonable doping levels and device-structure dimensions. Transientphotocurrents produced in pn junctions by gamma rays render junctionisolation ineffective in high-radiation environments. For suchapplications, a preferred isolation technique is one that depends oncompletely surrounding devices with an insulator, rather than with a pnjunction.

These techniques are generally termed silicon-on-insulator (“SOI”)isolation processes. Included within SOI isolation processes are olderapproaches such as dielectric isolation (“DI”) and silicon-on-sapphire(“SOS”). Also included are more recently developed technologies:separation by implanted oxygen (“SIMOX”), zone-melting-recrystallization(“ZMR”), full isolation by porous-oxidized silicon (“FIPOS”), and waferbonding. The SOI process was developed by International BusinessMachines Corporation.

Unlike CMOS-based chips that are doped with impurities enabling the chipto store capacitance that must be discharged and recharged, SOI chipsare formed by setting transistors on a thin silicon layer that isseparated from the silicon substrate by an insulator layer of thinsilicon oxide or glass, which minimizes capacitance (or the energyabsorbed from the transistor). Full isolation is provided.

SOI isolation offers many advantages. In some cases, the SOI techniqueuses simpler manufacturing sequences and yields an improvedcross-section compared to circuits fabricated on bulk silicon. Theseadvantages are illustrated in FIGS. 1A and 1B, which compare amesa-isolated SOI CMOS process (FIG. 1B) with a p-well bulk CMOS process(FIG. 1A). SOI isolation also provides reduced capacitive couplingbetween various circuit elements over the entire IC and, in CMOScircuits, latch up is eliminated. SOI isolation may reduce chip size,increase packing density, or both. Minimum device separation isdetermined only by the limitation of lithography. Finally, reductions inparasitic capacitance and chip size allow the SOI process to provideincreased circuit speed.

When an SOI technology based on a thin silicon film is used, two otherimportant advantages can be obtained. First, a relatively benign surfacetopography (for step coverage) is produced if device isolation can beachieved by a complete island, sloped-etch wall process of the thinsilicon film. Second, because SOI isolation techniques eliminate theparasitic field of the field effect transistor (“FET”) between adjacentdevices, LOCOS processes are not needed.

As with all isolation technologies, SOI isolation has its disadvantages.For example, active-device regions in SOI technologies tend to be poorerin crystalline quality than their counterparts in bulk silicon. Morerelevant to the present invention, the presence of an insulator layertends to complicate or prevent the adoption of effectivedefect-gettering and impurity-gettering processes. Nevertheless, theadvantages of SOI isolation are sufficiently attractive thatimprovements to the technique have important commercial implications.

To overcome the shortcomings of conventional SOI isolation processes andthe devices resulting from such processes, a new process ofmanufacturing a SOI wafer and the wafer itself are provided. An objectof the present invention is to increase the reliability, ease, andefficiency of the process of manufacturing SOI wafers. A related objectis to widen the lithographic focus window of the manufacturing process.Another object is to reduce the time required to market SOI wafers. Itis still another object of the present invention to positively impactphotoresist thickness and stepper manufacturer selection duringmanufacture.

An additional object of the present invention is to incorporate improvedSOI wafers into such applications as optical switches. A related objectis to increase the speed of optical switches. Yet another object of thisinvention is to reduce power consumption.

SUMMARY OF THE INVENTION

To achieve these and other objects, and in view of its purposes, thepresent invention provides a silicon-on-insulator wafer comprising a topsilicon layer, a silicon substrate, and an oxide insulator layerdisposed across the wafer and between the silicon substrate and the topsilicon layer. The oxide insulator layer has at least one of a contouredtop surface and a contoured bottom surface. Also provided are processesfor manufacturing such a silicon-on-insulator wafer.

One process for manufacturing a silicon-on-insulator wafer according tothe present invention comprises the initial step of providing a siliconsubstrate. An oxide insulator layer is formed across the wafer, theinsulator layer being buried within the silicon substrate, dividing thesilicon substrate from a top silicon layer, and having a top surface anda bottom surface. Next, the insulator layer is thickened. At least oneof a contoured top surface and a contoured bottom surface of theinsulator layer is created. Finally, the structure is annealed tofurther thicken and contour the insulator layer.

Another exemplary process for manufacturing a silicon-on-insulator waferaccording to the present invention also comprises the initial step ofproviding a silicon substrate. Again, an oxide insulator layer is formedacross the wafer, the insulator layer being buried within the siliconsubstrate, dividing the silicon substrate from a top silicon layer, andhaving a top surface and a bottom surface. Next, the insulator layer isthickened. The chip periodicity for the wafer is generated and thecoordinates are set where a predetermined topography of the buried oxideinsulator layer is desired. The coordinates are transferred to an oxygenimplanter for implementation. The energy, dose, or temperature of theoxygen implant are adjusted with the implanter scanning and the wafertilting or rotating according to preset coordinates from the chipperiodicity map at the predetermined thicknesses and contours required.Created is at least one of a contoured top surface and a contouredbottom surface of the insulator layer. Finally, the structure isannealed to further thicken and contour the insulator layer.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary, but are notrestrictive, of the invention.

BRIEF DESCRIPTION OF THE DRAWING

The invention is best understood from the following detailed descriptionwhen read in connection with the accompanying drawing. It is emphasizedthat, according to common practice, the various features of the drawingare not to scale. On the contrary, the dimensions of the variousfeatures are arbitrarily expanded or reduced for clarity. Included inthe drawing are the following figures:

FIG. 1A illustrates a conventional p-well bulk CMOS process;

FIG. 1B illustrates a conventional mesa-isolated silicon-on-insulatorCMOS process;

FIG. 2 illustrates a conventional apparatus for the formation of a SIMOXwafer;

FIG. 3 illustrates an insulator layer of a SOI wafer according to thepresent invention with a convex top surface;

FIG. 4 illustrates an insulator layer according to the present inventionwith a top surface having alternating convex regions and substantiallyflat regions;

FIG. 5 illustrates an insulator layer of a SOI wafer according to thepresent invention with a concave top surface;

FIG. 6 illustrates an insulator layer according to the present inventionwith a top surface having alternating concave regions and substantiallyflat regions;

FIG. 7 illustrates an insulator layer according to the present inventionwith a patterned topography (both top and bottom surfaces) of controlledthickness and blended profile variations;

FIG. 8 illustrates an oxygen implanter constructed and configured totilt, rotate, and both tilt and rotate the wafer to achieve the desiredtopography of the insulator layer according to the present invention;and

FIG. 9 further illustrates the tilt angle and the rotation angle of awafer according to the present invention.

DETAILED DESCRIPTION OF THE INVENTION

Referring now to the drawing, in which like reference numbers refer tolike elements throughout the various figures that comprise the drawing,FIG. 2 shows a conventional apparatus for the formation of a SIMOX wafer10. The creation of a buried insulator layer 2 of silicon dioxide (SlO₂)by implanting oxygen into a silicon substrate 4 through the SIMOXprocess is one of the main commercial techniques for creating SOIstructures. A top silicon layer 6 resides on the insulator layer 2.

The technique requires a high dose (˜2×10¹⁸ cm⁻²) of oxygen (O⁺) ions 22from an implantation source 20; this dose provides the minimumconcentration necessary to ensure that a continuous layer ofstoichiometric silicon dioxide will be formed by reaction of the oxygenwith silicon during the annealing process. The energy of the implantmust also be high enough (150-180 keV) that the peak of the implant issufficiently deep within the silicon (0.3-0.5 μm). The wafer is normallyheated to more than 400° C. during the implantation process to ensurethat the surface maintains its crystallinity during the high-doseimplantation step.

A post-implant anneal is performed in a neutral ambient 30 such as N₂ orin O₂ to a sufficient time (3-5 hours) and at a high enough temperature(1,100-1,500° C.) to form a buried layer of silicon dioxide. The annealstep also allows excess oxygen in the surface silicon to out-diffuse,thereby increasing the dielectric strength of the burled oxide (“BOX”)layer. After the anneal step, the crystalline-silicon surface istypically thin (about 100-300 nm). Therefore, an additional layer ofepitaxial silicon is usually deposited so that single-crystal deviceregions ≧0.5 μm thick are available for fabricating devices.

The Table provided below summarizes data obtained using a scanningelectron microscope (“SEM”) to measure cross-sections on sample SOIwafers 10 manufactured using the SIMOX process. The data includethicknesses of buried insulator layers 2 and silicon-on-insulator layers6 obtained with five different oxygen implant sequences while holdingthe anneal constant (at 1,450° C.). The examples are included to moreclearly demonstrate the overall nature of the invention. These examplesare exemplary, not restrictive, of the invention.

Total Oxide Depth Avg Bottom Dose Energy Twist Temp. BOX SOI of BOX 1st1.25E+017 178K 20 Deg. 365 C. 2nd 1.45E+017 178K 200 Deg.  365 C.1.25E+017 178K 200 Deg.  365 C. 1.05E+017 178K 200 Deg.  365 C. 3rd2.00E+015 165K 20 Deg. Room 1382 678 2060 1.00E+015 163K 20 Deg. Room1312 663 1975 2.00E+015 161K 20 Deg. Room 1234 616 1850 1450 C. Anneal1st 1.25E+017 169K 20 Deg. 365 C. 2nd 1.25E+017 169K 200 Deg.  365 C.1.05E+017 169K 200 Deg.  365 C. 3rd 2.00E+015 157K 20 Deg. Room 1339 4841823 1.5E+015 157K 20 Deg. Room 1210 429 1639 1450 C. Anneal

In summary, a SOI wafer 10 is a structure in which a buried insulatorlayer 2 electrically isolates a silicon layer 6 from a silicon substrate4. The buried insulator layer 2 does not always occupy the entiresilicon substrate 4. Often, the insulator layer 2 occupies a portion ofthe silicon substrate 4. Regardless, the conventional SOI wafer 10includes an insulator layer 2 having a substantially flat top surface 8and a substantially flat bottom surface 12. The thickness uniformityspecification for a flat insulator layer 2 is usually ±1%, although thedegree of flatness can vary randomly across the wafer surface.

SIMOX has some advantages over other SOI technologies. Perhaps the mostimportant advantage is that the technology is transparent to themanufacturing line; the fabrication of SIMOX-based circuits usesprocessing steps similar to those used in conventional IC manufacturing.The SIMOX process does have some drawbacks, however, and the presentinvention is not limited to that specific process. For example, theSIMOX process requires the availability of a special oxygen implanter.High-beam-current implanter machines are necessary to make high-volumeproduction of wafers more feasible. Implantation parameters and annealschedules must be chosen appropriately to provide optimum IC performancebecause the microstructure of the surface-silicon film is sensitive tothe oxygen dose and the post-oxygen implant annealing temperature. Forexample, a lower dose of oxygen results in a higher oxygen content inthe silicon film and a higher density of oxygen precipitates at thesilicon-film/buried oxide interface following an anneal at 1,150° C. Foroxygen doses of 2.25×10¹⁸ cm⁻², thermal annealing at 1,275° C.annihilates the oxygen precipitates in the silicon film.

It has been discovered that, all other conditions being equal, the samechips built on and across an SOI wafer do not display the sameelectrical and physical characteristics expected from them. Rather, thechips suffer performance loss due to leakage from the top silicon layer6 to the silicon substrate 4 through the insulator layer 2. It hasfurther been discovered that some performance losses can be avoided ifthe buried insulator layer 2 is purposefully not made flat. Thus,according to the present invention, the topography of the buriedinsulator layer 2 is patterned or altered to achieve a variety ofadvantages relative to the conventional, substantially flat buried oxidelayer. Several specific embodiments of the topography are presentedbelow for purposes of illustration. The embodiments may be combinedacross a wafer. The controlled and patterned topography can be appliedto one or both sides (i.e., the top and bottom) of the insulator layer2.

1. CONVEX CONTOUR

The lithographic process window is most affected by wafer topographywhich displays a significant center-to-edge delta. The lithographicprocess is also affected by the top-center photoresist location duringcoating which usually leaves the resist somewhat thinner in the centerregion of the wafer. The thinner center region causes features toshrink, flop over for the gate, or leave imperfect resist side wallprofiles—risking implant and therefore device inaccuracies.

In addition, various oxide charging and internal arcing mechanismscaused by processing may eventually thin the insulator layer2—especially at the center of the wafer 10. The insulator layer 2usually does not retain its uniform flatness during extensivesemiconductor processing; rather, the insulator layer 2 becomes thinnerand thinner in the center region of the wafer 10 compared to the edgethroughout processing while not being directly exposed a large majority(99%) of the time. Such thinning causes a degradation in performance.

In a first embodiment of the present invention, the top 8 a of theburied insulator layer 2 is given a contoured convex shape asillustrated in FIG. 3. The insulator layer 2 may be made of any minimumthickness at the edge and maximum thickness at the center region of anySOI wafer 10 of any diameter. One important advantage of the convexshape is that it anticipates and compensates for the implicit centralthinning of the insulator layer 2. Even a relatively mild taperingacross the wafer can go a long way in anticipating the seeminglyinevitable thinning.

An exemplary process to obtain the uniformly contoured convex shape ofthe top 8 a of the insulator layer 2 of the SOI wafer 10 uses existingtechnology: a single crystal silicon wafer of any dimension andthickness, a qualified oxygen implanter, and a qualified oxygen annealfurnace. The first step of the process forms the deepest burled oxideinsulator layer 2 uniformly across the whole wafer 10. Next, one or moreof the implant dose, energy, and temperature is or are reduced tothicken this layer across the whole wafer. Then one or more of theimplant dose, energy, and temperature is or are reduced to thicken thislayer across a preset diameter that is less than the wafer diameteritself. It is this step of the process that initially creates thecontoured convex shape of the top 8 a. Finally, the wafer is annealed inan oxygen ambient to further thicken and contour the buried insulatorlayer 2 into a convex shape.

This process yields a uniform insulator layer 2 formed within a singlecrystal silicon wafer 10 by oxygen implanting. The thickness of theburled insulator layer 2 can be increased by adjusting the energy, dose,or temperature of the oxygen implant. The annealing step alsocontributes to the final shape of the insulator layer 2. As illustratedin FIG. 4, the process can be tailored to achieve a contoured patternfor the top 8 b of the insulator layer 2 having alternating convexregions and substantially flat regions.

2. CONCAVE CONTOUR

The charge trapped and built up both within and at the siliconinterfaces of the buried insulator layer 2 within thesilicon-on-insulator wafer 10 during various manufacturing stepseventually causes voltage breakdowns. The severity of such breakdownsdepends on the thickness of the insulator layer 2 itself. In order toaddress the problem of voltage breakdowns, a buried insulator layer 2having a uniformly contoured concave top 8 c is provided. Such astructure is illustrated in FIG. 5. The top 8 c may have any maximumthickness at the edge of the SOI wafer 10 of any diameter. The contouredconcave top 8 c helps to funnel the unwanted charge towards the edges ofthe wafer 10 where not as many chips are printed as on the rest of thewafer 10.

An exemplary process to obtain the uniformly contoured concave shape ofthe top 8 c of the insulator layer 2 of the SOI wafer 10 uses existingtechnology: a single crystal silicon wafer of any dimension andthickness, a qualified oxygen implanter, and a qualified oxygen annealfurnace. The first step of the process forms the deepest buried oxideinsulator layer 2 uniformly across the whole wafer 10. Next, one or moreof the implant dose, energy, and temperature is or are reduced tothicken this layer across the whole wafer. Then one or more of theimplant dose, energy, and temperature is or are reduced to thicken thislayer around the wafer 10 in a donut area the outer diameter of whichcannot exceed the diameter of the wafer 10 and the interior diameter ofwhich must be greater than zero. The implanter may be adjusted to scanonly the donut region around the wafer 10 within preset diameters. It isthis step of the process that initially creates the contoured concaveshape of the top 8 c. Finally, the wafer is annealed in an oxygenambient to further thicken and contour the buried insulator layer 2 intoa concave shape.

This process yields a uniform insulator layer 2 formed within a singlecrystal silicon wafer 10 by oxygen implanting. The thickness of theburied insulator layer 2 can be increased by adjusting the energy, dose,or temperature of the oxygen implant. The annealing step alsocontributes to the final shape of the insulator layer 2. As illustratedin FIG. 6, the process can be tailored to achieve a contoured patternfor the top 8 d of the insulator layer 2 having alternating concaveregions and substantially flat regions.

3. PATTERNED AND BLENDED CONTOUR

In order to address the various problems discussed above, a buriedinsulator layer 2 having a patterned topography of controlled thicknessand blended profile variations is provided. Such a structure isillustrated in FIG. 7. The top 8 e of the insulator layer 2 may have anycombination of convex, concave, and substantially flat portions.Similarly, the bottom 12 e of the insulator layer 2 may have anycombination of convex, concave, and substantially flat portions. The top8 e and bottom 12 e of the insulator layer 2 define between them avarying thickness for the insulator layer 2. The particular location andlength of a specific contoured portion of the top 8 e and bottom 12 eare selected to achieve desired performance parameters for the wafer 10.

An exemplary process to obtain the patterned topography of controlledthickness and blended profile variations for the insulator layer 2 ofthe SOI wafer 10 uses specifically designed manufacturing equipment.Such equipment is illustrated in FIGS. 8 and 9. As shown in FIG. 8, anoxygen implanter 50 is constructed and configured to tilt, rotate, orboth tilt and rotate the wafer 10. Such an implanter 50 allows themanufacturer to specify the angle at which the ion implant beam 42 fromthe ion source 40 impinges on the wafers 10 positioned on an implanterwheel 44.

The wafers 10 are notch oriented (twist) on the implanter wheel 44. Theimplanter wheel 44 rotates in the direction of arrow 46, namelyclockwise, at a specified speed (e.g., 200 rpm). The scan directions forthe ion implant beam 42 are depicted by the direction arrows 48 in FIG.8. Thus, provided according to the present invention is a high-energy,high-current oxygen implanter 50 able to tilt and rotate wafers 10 withthe maneuverability to execute such tilting and rotating actions atpre-programmed intervals during scanning. The oxygen implanter 50 canalso be qualified, of course, to generate a flat buried oxide insulatorlayer 2 within a single crystal silicon wafer 10 like conventional or“regular” implanters.

FIG. 9 further illustrates the tilt angle θ and the rotation angle φ ofa wafer 10 according to the present invention. The tilt angle θ ismeasured relative to the <100> direction perpendicular to the surface ofa (100) silicon wafer 10. The angle results from tilting the wafer 10about an axis located at and parallel to the <110> wafer flat. Therotation angle φ measures the rotation of the wafer 10 about an axisperpendicular to the center of the wafer 10. These two angles togetherspecify the angle at which the ion implant beam 42 impinges on the wafer10.

The first step of the manufacturing process forms an initial burledoxide insulator layer 2 on the wafer 10. Next, one or more of theimplant dose, energy, and temperature is or are reduced to thicken thislayer across the whole wafer 10. Then one or more of the implant dose,energy, and temperature is or are reduced to selectively pattern theburled insulator layer 2 with topography at predetermined coordinates.It is this step of the process that initially creates the patternedtopography of controlled thickness and blended profile variations of thetop 8 e and bottom 12 e. Finally, the wafer is annealed in an oxygenambient to further define the shape of the buried insulator layer 2.

The process may advantageously include the step of generating the chipperiodicity for the wafer and setting the coordinates where apredetermined topography of the buried oxide insulator layer 2 isdesired. This information can then be transferred to the implanter 50for implementation. The step of initiating the creation of thetopography of the buried oxide insulator layer 2 by adjusting theenergy, dose, or temperature of the oxygen implant can be done with theimplanter scanning and the wafer 10 tilting or rotating according topreset coordinates from the chip periodicity map at the predeterminedthicknesses and contours required by the structures to be built.

The oxygen implant doses, energies, and temperatures are adjusted toeliminate any silicon islands that may be lingering within the burledoxide insulator layer 2 that is being created. Furnace annealtemperatures and the percentage of oxygen in the anneal ambientdetermine the rate of oxygen diffusion from the ambient into the wafer10. These parameters also determine the final thickness and thesmoothness of the oxide-silicon interface.

This process yields an insulator layer 2 formed within a single crystalsilicon wafer 10 by oxygen implanting. The thickness of the buriedinsulator layer 2 can be increased by adjusting the energy, dose, ortemperature of the oxygen implant. The annealing step also contributesto the final shape of the insulator layer 2.

4. INDUSTRIAL APPLICABILITY

Especially as the technology matures, the process of selectivelygenerating predetermined topographies on the insulator layer of an SOIwafer either across the whole wafer or in a repeating pattern based on achip periodicity map of the wafer may be very useful in a number ofapplications. The present invention will be able to support bothtraditional and newer applications in semiconductor processing.Specifically, the invention may offer advantages for CMOS, bio chips,and other semiconductor devices. Even more specifically, the presentinvention may permit further reduction of the gate length.

In addition, it is desired to widen the normally narrow lithographicprocess window for critical dimensions across the SOI wafer. Knownapproaches directed toward that goal include multiple re-compensating ofphotomasks, photoresist system switches, and possibly the use ofelaborate and involved secondary silicon growth schemes. Each approachhas its own drawbacks. For a given mask set, the lithographic and otherphysical and electrical process windows can be widened by control andoptimization of the buried insulator layer on SOI wafers according tothe present invention. The invention can be adapted for all types,thicknesses, diameters, and other specifications of SOI wafers.

The thickness of the top silicon layer of the SOI structure is dictatedby the target electrical performance. The thickness of the insulatorlayer under the top silicon layer, although not arbitrary, is not ascritical as that of the top silicon layer. The reflective properties ofthe insulator layer can be used to optimize the numerical aperture andsigma of the lens of the lithography tool to keep the focus window aswide as possible. Current manufacturing processes simply target auniform thickness across the SOI wafer.

The invention is also useful for optical switching especially inmicro-electro-mechanical (“MEMS”) systems. The curved shape of theinsulator layer allows the switch to gather more light; therefore, theswitch becomes faster. MEMS manufacturing is changing from bulk siliconwafers to SOI wafers due to the beneficial dielectric isolation providedby the buried oxide insulator layer within the SOI wafer. The insulatorlayer is also used as an etch stop for both wet and dry etching ofsilicon from either side of the wafer to form and define the shapes ofmicro structures with flat surfaces that could also selectively benefitfrom curved surfaces in applications like the formation of mirrors inMEMS optical switches.

Thus, one particular example where a need for the present inventioncurrently exists involves the mirrors generated in MEMS opticalswitches. When these arrays are formed on single crystal SOI wafers aspart of a fiber optic switch, each mirror has a diameter or edges of 50μm or more, and the array can be 1,000×1,000. With the demand foroptical bandwidth deemed to be doubling every nine months according to a2001 survey, the need to keep the free light beams intact without anyloss of signal is challenging; expensive amplification methods areusually needed after the switch. Currently, the mirrors formed on SOIwafers are substantially flat on top, which is what is typicallydesired, and substantially flat on the bottom because they have beendefined on a flat BOX insulator layer.

This flatness helps with accuracy in terms of direction but cannotprevent the light beam from widening and becoming less defined. A localcontoured topography of the buried oxide isolation layer underneath thearea and volume of the SOI designated to be etched into a mirrorsimultaneously contours that area of the single crystal silicon itself.This topography allows a mirror to assume a concave surface to re-focusthe weakened light beam at periodic intervals. Alternatively, thetopography allows the mirror and the optical designers to send the lightbeam in two different directions by assuming a convex surface, allowingthe formation of arrays in asymmetrical configurations. Variations inthe BOX insulator layer thickness can also help create beams of variouslengths.

1. A process for manufacturing a silicon-on-insulator wafer comprisingthe steps of: providing a silicon substrate; forming an oxide insulatorlayer across the wafer by oxygen implantation, the insulator layer beingburied within the silicon substrate, dividing the silicon substrate froma top silicon layer, and having a top surface and a bottom surface;thickening the insulator layer by reducing one or more of theimplantation dose, energy, and temperature; creating at least one of acontoured top surface and a contoured bottom surface of the insulatorlayer by adjusting one or more of the implantation dose, energy, andtemperature; and annealing to further thicken and contour the insulatorlayer.
 2. The process of claim 1 wherein the step of forming an oxideinsulator layer across the wafer by oxygen implantation is accomplishedusing a qualified oxygen implanter.
 3. The process of claim 1 whereinthe step of annealing is an oxygen anneal.
 4. The process of claim 1wherein the at least one contoured surface is uniformly convex.
 5. Theprocess of claim 4 wherein the step of forming an oxide insulator layeracross the wafer by oxygen implantation is accomplished using aqualified oxygen implanter and the step of creating the at least oneuniformly convex surface includes reducing one or more of the implantdose, energy, and temperature to thicken the insulator layer across apreset diameter that is less than the diameter of the wafer.
 6. Theprocess of claim 1 wherein the at least one contoured surface hasalternating convex and substantially flat regions.
 7. The process ofclaim 1 wherein the at least one contoured surface is uniformly concave.8. The process of claim 7 wherein the step of forming an oxide insulatorlayer across the wafer by oxygen implantation is accomplished using aqualified oxygen implanter and the step of creating the at least oneuniformly concave surface includes reducing one or more of the implantdose, energy, and temperature to thicken the insulator layer around thewafer in a donut area having an outer diameter not exceeding thediameter of the wafer an interior diameter greater than zero.
 9. Theprocess of claim 8 further comprising adjusting the implanter to scanonly the donut region around the wafer within preset diameters.
 10. Theprocess of claim 1 wherein the at least one contoured surface hasalternating concave and substantially flat regions.
 11. The process ofclaim 1 wherein the at least one contoured surface includes acombination of convex, concave, and substantially flat portions.
 12. Theprocess of claim 11 wherein the step of forming an oxide insulator layeracross the wafer by oxygen implantation is accomplished using aqualified oxygen implanter and the step of creating the at least onecontoured surface includes reducing one or more of the implant dose,energy, and temperature to selectively pattern the buried insulatorlayer with topography at predetermined coordinates.
 13. A process formanufacturing a silicon-on-insulator wafer comprising the steps of:providing a silicon substrate; forming an oxide insulator layer acrossthe wafer by oxygen implantation, the insulator layer being buriedwithin the silicon substrate, dividing the silicon substrate from a topsilicon layer, and having a top surface and a bottom surface; thickeningthe insulator layer by reducing one or more of the implantation dose,energy, and temperature; generating the chip periodicity for the waferand setting the coordinates where a predetermined topography of theburied oxide insulator layer is desired; transferring the coordinates toan oxygen implanter for implementation; adjusting the energy, dose, ortemperature of the oxygen implant with the implanter scanning and thewafer tilting or rotating according to preset coordinates from the chipperiodicity map at the predetermined thicknesses and contours required,thereby creating at least one of a contoured top surface and a contouredbottom surface of the insulator layer; and annealing to further thickenand contour the insulator layer.